Transport properties of Andreev polarons in a superconductor-semiconductor-superconductor junction with superlattice structure.

Transport properties of Andreev polarons in superconductor-semiconductor-superconductor junction with superlattice structure

Ryotaro Inoue, 2, ∗ Kenta Muranaga, Hideaki Takayanagi, 3 Eiichi Hanamura, Masafumi Jo, Tatsushi Akazaki, 2 and Ikuo Suemune 2 Dept. of Applied Physics, Tokyo Univ. of Science, Tokyo 162-8601, Japan. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan. MANA, National Inst. for Materials Science, Tsukuba 305-0044, Japan. Japan Science and Technology Agency, Kawaguchi 332-0012, ...

Crossover from tunneling to meta.llic behavior in superconductofgsemiconductor contacts

We describe current-voltage measurements on superconducting Nb/lnGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover...

Coherent diffusive transport mediated by Andreev reflections at V=Delta/e in a mesoscopic superconductor/semiconductor/superconductor junction

Circuit theory of unconventional superconductor junctions.

We extend the circuit theory of superconductivity to cover transport and proximity effect in mesoscopic systems that contain unconventional superconductor junctions. The approach fully accounts for zero-energy Andreev bound states forming at the surface of unconventional superconductors. As a simple application, we investigate the transport properties of a diffusive normal metal in series with ...

Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions

We have found experimentally that the noise of ballistic electron transport in a superconductor/ semiconductor/superconductor junction is enhanced relative to the value given by the general relation, SV=2eIR 2 cothseV /2kTd, for two voltage regions in which this expression reduces to its thermal and shot noise limits. The noise enhancement is explained by the presence of large charge quanta, wi...